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Ceram. Soc. 24 (2004) 265-270. M. K. M. C. O. Ritchie, Atomic-resolution imaging of the nanoscale origin of toughness in rare-earth doped SiC, Nano Lett. 8 (2008) 2935-2939. -W. H. Lee, T. Nishimura, M. Mitomo, Heat-resistant silicon carbide with aluminum nitride and scandium oxide, Acta Mater. 53 (2005) 4701-4708. -Y. -W. Kim, T. S. % aluminum nitride and lutetium oxide, J. Eur. Ceram. Soc. 33 (2013) 345-350. -W. J. C. H. -Y. Lim, Electrodischarge-machinable silicon carbide ceramics sintered with yttrium nitrate, J.

C. Lien, N. Ferralis, C. Carraro, Growth of epitaxial 3C-SiC films on Si(100) via low temperature SiC buffer layer, Cryst. Growth Des. 10 (2009) 36-39. [5] A. Ellison, J. Zhang, A. Henry, E. Janzen, Epitaxial growth of SiC in a chimney CVD reactor, J. Cryst. Growth. 235 (2002) 225-239. [6] G. Aylward, T. 115. [7] F. Liao, S. M. R. L. Girshick, High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma, Mater. Lett. 57 (2003) 1982-1986. W. J. Chung, S.

Soc. 75 (1992) 1603-1611. [10] A. Boulle, Z. Oudjedi, R. Guinebretiere, B. Soulestin, A. Dauger, Ceramic nanocomposites obtained by sol-gel coating of submicron powders, Acta. Mater. 49 (2001) 811-816. [11] C. Vahlas, B. Caussat, P. N. Angelopoulos, Principles and applications of CVD powder technology, Mater. Sci. Eng. R 53 (2006) 1-72. [12] H. Itoh, N. Watanabe, S. Naka, Preparation of titanium nitride coated powders by rotary powder bed chemical vapour deposition, J. Mater. Sci. 23 (1988) 43-47.

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